leshan radio company, ltd. 1 3 2 maximum ratings rating symbol bc846 bc847 bc848 unit collector?emitter voltage v ceo 65 45 30 v collector?base voltage v cbo 80 50 30 v emitter?base voltage v ebo 6.0 6.0 5.0 v collector current ? continuous i c 100 100 100 madc thermal characteristics characteristic symbol max unit total device dissipation p d 150 mw thermal resistance, junction to ambient r ja 833 c/w junction and storage temperature t j , t stg ?55 to +150 c device marking lbc846awt1g = 1a; lbc846bwt1g = 1b; lbc847awt1g = 1e; lbc847bwt1g = 1f; lbc847cwt1g = 1g; lbc848awt1g = 1j; lbc848bwt1g = 1k; lbc848cwt1g = 1l; electrical characteristics (t a = 25c unless otherwise noted.) characteristic symbol min typ max unit off characteristics collector?emitter breakdown voltage 65 ? ? (i c = 10 ma) v (br)ceo 45 ? ? v 30 ? ? collector?emitter breakdown voltage 80 ? ? (i c = 10 a, v eb = 0) v (br)ces 50 ? ? v 30 ? ? collector?base breakdown voltage 80 ? ? (i c = 10 a) v (br)cbo 50 ? ? v 30 ? ? emitter?base breakdown voltage 6.0 ? ? (i e = 1.0 a) v (br)ebo 6.0 ? ? v 5.0 ? ? collector cutoff current (v cb = 30 v) i cbo ??15na (v cb = 30 v, t a = 150c) ? ? 5.0 a lbc846awt1g,bwt1g lbc847awt1g,bwt1g cwt1g lbc848awt1g,bwt1g cwt1g 2 emitter 3 collector 1 base sot?323 /sc?70 1.fr?5=1.0 x 0.75 x 0.062in lbc847 series lbc846 series lbc848 series lbc846 series lbc847 series lbc848 series lbc846 series lbc847 series lbc848 series lbc846 series lbc847 series lbc848 series ordering information general purpose transistors npn silicon pb free ? ( ) device package shipping lbc846awt1g sc-70 3000/tape&reel 10000/tape&reel lbc846awt3g sc-70 we declare that the material of product compliance with rohs requirements. rev.o 1/9 s-lbc846awt1g,bwt1g s-lbc847awt1g,bwt1g cwt1g s-lbc848awt1g,bwt1g cwt1g s- prefix for automotive and other applications requiring unique site and control change requirements; aec-q101 qualified and ppap capable. s-lbc846awt1g s-lbc846awt3g
leshan radio company, ltd. lbc846awt1g,bwt1g, lbc847awt1g,bwt1g, cwt1g, lbc848awt1g,bwt1g,cwt1g electrical characteristics (t a = 25c unless otherwise noted) (continued) characteristic symbol min ty p max unit on characteristics dc current gain h fe (i c = 2.0 ma, v ce = 5.0 v) 110 180 220 200 290 450 420 520 800 collector?emitter saturation voltage (i c = 10 ma, i b = 0.5 ma) v ce(sat) ? ? 0.25 v collector?emitter saturation voltage (i c = 100 ma, i b = 5.0 ma) ? ? 0.6 base?emitter saturation voltage (i c = 10 ma, i b = 0.5 ma) v be(sat) ? 0.7 ? v base?emitter saturation voltage (i c = 100 ma, i b = 5.0 ma) ? 0.9 ? base?emitter voltage (i c = 2.0 ma, v ce = 5.0 v) v be(on) 580 660 700 mv base?emitter voltage (i c = 10 ma, v ce = 5.0 v) ? ? 770 small?signal characteristics current?gain ? bandwidth product f t 100 ? ? mhz (i c = 10 ma, v ce = 5.0 vdc, f = 100 mhz) output capacitance (v cb = 10 v, f = 1.0 mhz) c obo ? ? 4.5 pf noise figure (i c = 0.2 ma, nf db v ce = 5.0 v dc , r s = 2.0 k ? , ? ? 10 f = 1.0 khz, bw = 200 hz) ? ? 4.0 lbc846a, lbc847a, lbc848a lbc846b, lbc847b, lbc848b lbc847c, lbc848c lbc846a, lbc847a,l bc848a lbc846b, lbc847b,l bc848b lbc847c, lbc848c lbc846a, lbc847a, lbc848a figure 1. dc current gain vs. collector current figure 2. collector emitter saturation voltage vs. collector current i c , collector current (a) i c , collector current (a) 0.1 0.01 0.001 0 100 200 300 0.1 0.01 0.001 0.0001 0 0.02 0.18 figure 3. base emitter saturation voltage vs. collector current figure 4. base emitter voltage vs. collector current i c , collector current (a) i c , collector current (a) 0.1 0.01 0.001 0.0001 0.2 0.3 0.5 0.6 0.7 0.8 1.0 0.1 0.01 0.001 0.0001 0.2 0.3 0.5 0.6 0.8 0.9 1.0 1.2 h fe , dc current gain v ce(sat) , collector ? emitter saturation voltage (v) v be(sat) , base ? emitter saturation voltage (v) v be(on) , base ? emitter voltage (v) 1 v ce = 1 v 150 c ? 55 c 25 c i c /i b = 20 150 c ? 55 c 25 c 0.4 0.9 i c /i b = 20 150 c ? 55 c 25 c 0.4 0.7 1.1 v ce = 5 v 150 c ? 55 c 25 c 0.04 0.06 0.08 0.10 0.12 0.14 0.16 rev.o 2/9 s-lbc846awt1g,bwt1g, s-lbc847awt1g,bwt1g, cwt1g, s-lbc848awt1g,bwt1g,cwt1g
leshan radio company, ltd. lbc846a, lbc847a, lbc848a figure 5. collector saturation region i b , base current (ma) figure 6. base ? emitter temperature coefficient i c , collector current (ma) 1.6 1.2 2.0 2.8 2.4 1.2 1.6 2.0 0.02 1.0 10 0 20 0.1 0.4 0.8 v ce , collector-emitter voltage (v) vb , temperature coefficient (mv/ c) 0.2 1.0 10 100 -55 c to +125 c t a = 25 c i c = 50 ma i c = 100 ma i c = 200 ma i c = 20 ma i c = 10 ma 1.0 figure 7. capacitances v r , reverse voltage (volts) 10 figure 8. current ? gain ? bandwidth product i c , collector current (madc) 0.4 0.6 1.0 10 20 1.0 2.0 6.0 40 80 100 200 300 400 60 20 40 30 7.0 5.0 3.0 2.0 0.7 1.0 10 20 2.0 50 30 7.0 5.0 3.0 0.5 v ce = 10 v t a = 25 c c, capacitance (pf) f, current-gain - bandwidth product (mhz) t 0.8 4.0 8.0 t a = 25 c c ob c ib lbc846b figure 9. dc current gain vs. collector current figure 10. collector emitter saturation voltage vs. collector current i c , collector current (a) i c , collector current (a) 0.1 0.01 0.001 0 100 200 300 400 600 0.1 0.01 0.001 0.0001 0 0.15 0.30 h fe , dc current gain v ce(sat) , collector ? emitter saturation voltage (v) 1 v ce = 1 v 150 c ? 55 c 25 c i c /i b = 20 150 c ? 55 c 25 c 500 0.25 0.20 0.05 0.10 rev.o 3/9 lbc846awt1g,bwt1g, lbc847awt1g,bwt1g, cwt1g, lbc848awt1g,bwt1g,cwt1g s-lbc846awt1g,bwt1g, s-lbc847awt1g,bwt1g, cwt1g, s-lbc848awt1g,bwt1g,cwt1g
leshan radio company, ltd. figure 11. base emitter saturation voltage vs. collector current figure 12. base emitter voltage vs. collector current i c , collector current (a) i c , collector current (a) 0.1 0.01 0.001 0.0001 0.2 0.3 0.5 0.6 0.7 0.8 1.0 1.1 0.1 0.01 0.001 0.0001 0.2 0.3 0.5 0.6 0.8 0.9 1.0 1.2 v be(sat) , base ? emitter saturation voltage (v) v be(on) , base ? emitter voltage (v) 0.4 0.9 i c /i b = 20 150 c ? 55 c 25 c 0.4 0.7 1.1 v ce = 5 v 150 c ? 55 c 25 c lbc846b figure 13. collector saturation region i b , base current (ma) figure 14. base ? emitter temperature coefficient i c , collector current (ma) 1.0 1.2 1.6 2.0 0.02 1.0 10 0 20 0.1 0.4 0.8 v ce , collector-emitter voltage (volts) vb , temperature coefficient (mv/ c) 0.2 2.0 10 200 1.0 t a = 25 c 200 ma 50 ma i c = 10 ma 0.05 0.2 0.5 2.0 5.0 100 ma 20 ma 1.4 1.8 2.2 2.6 3.0 0.5 5.0 20 50 100 -55 c to 125 c vb for v be figure 15. capacitance v r , reverse voltage (volts) 40 figure 16. current ? gain ? bandwidth product i c , collector current (ma) 0.1 0.2 1.0 50 2.0 2.0 10 100 100 200 500 50 20 20 10 6.0 4.0 1.0 10 50 100 5.0 v ce = 5 v t a = 25 c c, capacitance (pf) f, current-gain - bandwidth product t 0.5 5.0 20 t a = 25 c c ob c ib rev.o 4/9 lbc846awt1g,bwt1g, lbc847awt1g,bwt1g, cwt1g, lbc848awt1g,bwt1g,cwt1g s-lbc846awt1g,bwt1g, s-lbc847awt1g,bwt1g, cwt1g, s-lbc848awt1g,bwt1g,cwt1g
leshan radio company, ltd. lbc847b, lbc848b figure 17. dc current gain vs. collector current figure 18. collector emitter saturation voltage vs. collector current i c , collector current (a) i c , collector current (a) 0.1 0.01 0.001 0 100 200 600 0.1 0.01 0.001 0.0001 0 0.05 0.30 figure 19. base emitter saturation voltage vs. collector current figure 20. base emitter voltage vs. collector current i c , collector current (a) i c , collector current (a) 0.1 0.01 0.001 0.0001 0.2 0.3 0.5 0.6 0.7 0.8 1.1 0.1 0.01 0.001 0.0001 0.2 0.3 0.5 0.6 0.8 0.9 1.0 1.2 h fe , dc current gain v ce(sat) , collector ? emitter saturation voltage (v) v be(sat) , base ? emitter saturation voltage (v) v be(on) , base ? emitter voltage (v) 1 v ce = 1 v 150 c ? 55 c 25 c i c /i b = 20 150 c ? 55 c 25 c 0.4 0.9 i c /i b = 20 150 c ? 55 c 25 c 0.4 0.7 1.1 v ce = 5 v 150 c ? 55 c 25 c 0.10 0.15 0.20 0.25 300 400 500 1.0 figure 21. collector saturation region i b , base current (ma) figure 22. base ? emitter temperature coefficient i c , collector current (ma) 1.6 1.2 2.0 2.8 2.4 1.2 1.6 2.0 0.02 1.0 10 0 20 0.1 0.4 0.8 v ce , collector-emitter voltage (v) vb , temperature coefficient (mv/ c) 0.2 1.0 10 100 -55 c to +125 c t a = 25 c i c = 50 ma i c = 100 ma i c = 200 ma i c = 20 ma i c = 10 ma 1.0 rev.o 5/9 lbc846awt1g,bwt1g, lbc847awt1g,bwt1g, cwt1g, lbc848awt1g,bwt1g,cwt1g s-lbc846awt1g,bwt1g, s-lbc847awt1g,bwt1g, cwt1g, s-lbc848awt1g,bwt1g,cwt1g
leshan radio company, ltd. figure 23. capacitances v r , reverse voltage (volts) 10 figure 24. current ? gain ? bandwidth product i c , collector current (madc) 0.4 0.6 1.0 10 20 1.0 2.0 6.0 40 80 100 200 300 400 60 20 40 30 7.0 5.0 3.0 2.0 0.7 1.0 10 20 2.0 50 30 7.0 5.0 3.0 0.5 v ce = 10 v t a = 25 c c, capacitance (pf) f, current-gain - bandwidth product (mhz) t 0.8 4.0 8.0 t a = 25 c c ob c ib lbc847b, lbc848b lbc847c, lbc848c, lbc849c, lbc850c figure 25. dc current gain vs. collector current figure 26. collector emitter saturation voltage vs. collector current i c , collector current (a) i c , collector current (a) 0.1 0.01 0.001 0 100 200 1000 0.1 0.01 0.001 0.0001 0 0.05 0.30 figure 27. base emitter saturation voltage vs. collector current figure 28. base emitter voltage vs. collector current i c , collector current (a) i c , collector current (a) 0.1 0.01 0.001 0.0001 0.2 0.3 0.5 0.6 0.7 0.8 1.1 0.1 0.01 0.001 0.0001 0.2 0.3 0.5 0.6 0.8 0.9 1.0 1.2 h fe , dc current gain v ce(sat) , collector ? emitter saturation voltage (v) v be(sat) , base ? emitter saturation voltage (v) v be(on) , base ? emitter voltage (v) 1 v ce = 1 v 150 c ? 55 c 25 c i c /i b = 20 150 c ? 55 c 25 c 0.4 0.9 i c /i b = 20 150 c ? 55 c 25 c 0.4 0.7 1.1 v ce = 5 v 150 c ? 55 c 25 c 0.10 0.15 0.20 0.25 300 400 500 1.0 600 700 800 900 rev.o 6/9 lbc846awt1g,bwt1g, lbc847awt1g,bwt1g, cwt1g, lbc848awt1g,bwt1g,cwt1g s-lbc846awt1g,bwt1g, s-lbc847awt1g,bwt1g, cwt1g, s-lbc848awt1g,bwt1g,cwt1g
leshan radio company, ltd. figure 29. collector saturation region i b , base current (ma) figure 30. base ? emitter temperature coefficient i c , collector current (ma) 1.6 1.2 2.0 2.8 2.4 1.2 1.6 2.0 0.02 1.0 10 0 20 0.1 0.4 0.8 v ce , collector-emitter voltage (v) vb , temperature coefficient (mv/ c) 0.2 1.0 10 100 -55 c to +125 c t a = 25 c i c = 50 ma i c = 100 ma i c = 200 ma i c = 20 ma i c = 10 ma 1.0 figure 31. capacitances v r , reverse voltage (volts) 10 figure 32. current ? gain ? bandwidth product i c , collector current (madc) 0.4 0.6 1.0 10 20 1.0 2.0 6.0 40 80 100 200 300 400 60 20 40 30 7.0 5.0 3.0 2.0 0.7 1.0 10 20 2.0 50 30 7.0 5.0 3.0 0.5 v ce = 10 v t a = 25 c c, capacitance (pf) f, current-gain - bandwidth product (mhz) t 0.8 4.0 8.0 t a = 25 c c ob c ib lbc847c, lbc848c rev.o 7/9 lbc846awt1g,bwt1g, lbc847awt1g,bwt1g, cwt1g, lbc848awt1g,bwt1g,cwt1g s-lbc846awt1g,bwt1g, s-lbc847awt1g,bwt1g, cwt1g, s-lbc848awt1g,bwt1g,cwt1g
leshan radio company, ltd. 1 ms thermal limit 1 s figure 33. safe operating area for lbc846a, lbc846b figure 34. safe operating area for lbc847a, lbc847b, lbc847c v ce , collector emitter voltage (v) v ce , collector emitter voltage (v) 100 10 1 0.001 0.01 0.1 1 100 10 1 0.1 0.001 0.01 0.1 1 figure 35. safe operating area for lbc848a, lbc848b, lbc848c v ce , collector emitter voltage (v) 100 10 1 0.1 0.001 0.01 0.1 1 i c , collector current (a) i c , collector current (a) i c , collector current (a) 100 ms 10 ms 1 ms thermal limit 1 s 100 ms 10 ms 1 ms thermal limit 1 s 100 ms 10 ms rev.o 8/9 lbc846awt1g,bwt1g, lbc847awt1g,bwt1g, cwt1g, lbc848awt1g,bwt1g,cwt1g s-lbc846awt1g,bwt1g, s-lbc847awt1g,bwt1g, cwt1g, s-lbc848awt1g,bwt1g,cwt1g
leshan radio company, ltd. sc - 70 / sot - 323 a a2 d e1 b e e a1 c l 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 0.05 (0.002) 1.9 0.075 0.65 0.025 0.65 0.025 0.9 0.035 0.7 0.028 mm inches scale 10:1 xx m xx = specific device code m = date code = pb?free package generic marking diagram *this information is generic. please refer to device data sheet for actual part marking. pb?free indicator, ago or microdot a o, may or may not be present. 1 soldering footprint* h e dim a min nom max min millimeters 0.80 0.90 1.00 0.032 inches a1 0.00 0.05 0.10 0.000 a2 0.7 ref b 0.30 0.35 0.40 0.012 c 0.10 0.18 0.25 0.004 d 1.80 2.10 2.20 0.071 e 1.15 1.24 1.35 0.045 e 1.20 1.30 1.40 0.047 0.035 0.040 0.002 0.004 0.014 0.016 0.007 0.010 0.083 0.087 0.049 0.053 0.051 0.055 nom max l 2.00 2.10 2.40 0.079 0.083 0.095 h e e1 0.65 bsc 0.425 ref 0.028 ref 0.026 bsc 0.017 ref rev.o 9/9 lbc846awt1g,bwt1g, lbc847awt1g,bwt1g, cwt1g, lbc848awt1g,bwt1g,cwt1g s-lbc846awt1g,bwt1g, s-lbc847awt1g,bwt1g, cwt1g, s-lbc848awt1g,bwt1g,cwt1g
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